Datasheet

PEMD10_PUMD10 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 6 — 4 January 2012 4 of 16
NXP Semiconductors
PEMD10; PUMD10
NPN/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
SOT363 and SOT666; FR4 PCB, standard footprint
Fig 1. Per device: Power derating curve
T
amb
(°C)
-75 17512525 75-25
006aac749
200
100
300
400
P
tot
(mW)
0
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
PEMD10 (SOT666)
[2]
--625K/W
PUMD10 (SOT363) - - 625 K/W
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
PEMD10 (SOT666)
[2]
--417K/W
PUMD10 (SOT363) - - 417 K/W