Datasheet

PEMB2_PUMB2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 17 November 2011 6 of 14
NXP Semiconductors
PEMB2; PUMB2
PNP/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k
7. Characteristics
[1] Characteristics of built-in transistor
Table 8. Characteristics
T
amb
=25  C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base cut-off
current
V
CB
= 50 V; I
E
=0A - - 100 nA
I
CEO
collector-emitter cut-off
current
V
CE
= 30 V; I
B
=0A - - 1 A
V
CE
= 30 V; I
B
=0A;
T
j
=150C
--5 A
I
EBO
emitter-base cut-off
current
V
EB
= 5V; I
C
=0A - - 90 A
h
FE
DC current gain V
CE
= 5V; I
C
= 5mA 80 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA - - 150 mV
V
I(off)
off-state input voltage V
CE
= 5V; I
C
= 100 A- 1.2 0.8 V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
= 2mA 3 1.6 - V
R1 bias resistor 1 (input) 33 47 61 k
R2/R1 bias resistor ratio 0.8 1 1.2
C
c
collector capacitance V
CB
= 10 V; I
E
=i
e
=0A;
f=1MHz
--3pF
f
T
transition frequency V
CE
= 5V; I
C
= 10 mA;
f=100MHz
[1]
- 180 - MHz