Datasheet

1999 Jul 23 6
Philips Semiconductors Product specification
UHF wideband transistor PRF947
Fig.6 Gain as a function of collector current;
typical values.
f = 1 GHz; V
CE
=6V.
handbook, halfpage
01020 40
gain
(dB)
G
UM
MSG
20
0
16
MGS500
30
12
8
4
I
C
(mA)
G
max
Fig.7 Gain as a function of frequency; typical
values.
I
C
= 5 mA; V
CE
=6V.
handbook, halfpage
50
0
MGS501
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
G
UM
MSG
G
max
Fig.8 Gain as a function of frequency; typical
values.
I
C
= 15 mA; V
CE
=6V.
handbook, halfpage
50
0
MGR502
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
G
UM
MSG
G
max
Fig.9 Gain as a function of frequency; typical
values.
I
C
= 30 mA; V
CE
=6V.
handbook, halfpage
50
0
MGS503
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
G
UM
MSG
G
max