Datasheet

1999 Jul 23 2
Philips Semiconductors Product specification
UHF wideband transistor PRF947
FEATURES
Small size
Low noise
Low distortion
High gain
Gold metallization ensures excellent reliability.
APPLICATIONS
Communication and instrumentation systems.
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT323
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT323) and symbol.
Marking code: V0.
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
QUICK REFERENCE DATA
Note
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
re
feedback capacitance I
C
= 0; V
CB
=6V; f=1MHz 0.3 pF
f
T
transition frequency I
C
= 15 mA; V
CE
=6V; f
m
= 1 GHz 8.5 GHz
G
UM
maximum unilateral power gain I
C
= 15 mA; V
CE
=6V;
T
amb
=25°C; f = 1 GHz
16 dB
NF noise figure Γ
S
= Γ
opt
; I
C
= 5 mA; V
CE
=6V;
f = 1 GHz
1.5 dB
P
tot
total power dissipation T
s
=60°C; note 1 −−250 mW
R
th j-s
thermal resistance from junction
to soldering point
P
tot
= 250 mW −−460 K/W