Datasheet

PMSTA05_06 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 22 July 2010 4 of 9
NXP Semiconductors
PMSTA05; PMSTA06
500 mA NPN general-purpose transistors
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base
cut-off current
PMSTA05 V
CB
=60V; I
E
= 0 A - - 100 nA
PMSTA06 V
CB
=80V; I
E
= 0 A - - 100 nA
I
EBO
emitter-base
cut-off current
V
EB
=3V; I
C
= 0 A - - 500 nA
h
FE
DC current gain V
CE
=2V; I
C
=10mA 50 - -
V
CE
=1V; I
C
= 100 mA
[1]
50 - -
V
CEsat
collector-emitter
saturation voltage
I
C
=100mA;
I
B
=10mA
[1]
-250mV
V
BEsat
base-emitter
saturation voltage
I
C
=100mA;
I
B
=10mA
[1]
--900mV
V
BE
base-emitter voltage I
C
=100mA; V
CE
=1V - - 1.2 V
f
T
transition frequency V
CE
=2V; I
C
=10mA;
f=100MHz
100 - - MHz
Fig 1. Package outline SOT323 (SC-70)
04-11-04Dimensions in mm
0.45
0.15
1.1
0.8
2.2
1.8
2.2
2.0
1.35
1.15
1.3
0.4
0.3
0.25
0.10
12
3