Datasheet

PMST3906_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 29 April 2009 5 of 10
NXP Semiconductors
PMST3906
40 V, 200 mA PNP switching transistor
8. Test information
I
C
/I
B
=10
(1) T
amb
= 150 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
Fig 5. Collector-emitter saturation voltage as a function of collector current;
typical values
−10
3
−10
2
−10
mhc463
−10
−1
−1 −10
I
C
(mA)
V
CEsat
(mV)
−10
2
−10
3
(1)
(2)
(3)
V
I
= 5 V; t = 500 µs; t
p
=10µs; t
r
=t
f
≤ 3ns
R1 = 56 Ω; R2 = 2.5 kΩ; R
B
= 3.9 kΩ; R
C
= 270 Ω
V
BB
= 1.9 V; V
CC
= −3V
Oscilloscope: input impedance Z
I
=50Ω
Fig 6. Test circuit for switching times
R
C
R2
R1
DUT
mgd624
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC