Datasheet

PMST3906_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 29 April 2009 3 of 10
NXP Semiconductors
PMST3906
40 V, 200 mA PNP switching transistor
7. Characteristics
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
I
E
= 0 A; V
CB
= −30 V - - −50 nA
I
EBO
emitter-base cut-off
current
I
C
= 0 A; V
EB
= −6V - - −50 nA
h
FE
DC current gain V
CE
= −1V
I
C
= −0.1 mA 60 - -
I
C
= −1mA 80 - -
I
C
= −10 mA 100 - 300
I
C
= −50 mA 60 - -
I
C
= −100 mA 30 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= −10 mA; I
B
= −1mA - - −250 mV
I
C
= −50 mA; I
B
= −5mA - - −400 mV
V
BEsat
base-emitter
saturation voltage
I
C
= −10 mA; I
B
= −1mA - - −850 mV
I
C
= −50 mA; I
B
= −5mA - - −950 mV
t
d
delay time I
C
= −10 mA;
I
Bon
= −1 mA;
I
Boff
=1mA
--35ns
t
r
rise time - - 35 ns
t
on
turn-on time - - 70 ns
t
s
storage time - - 225 ns
t
f
fall time - - 75 ns
t
off
turn-off time - - 300 ns
C
c
collector capacitance I
E
=i
e
=0A;V
CB
= −5V;
f=1MHz
- - 4.5 pF
C
e
emitter capacitance I
C
=i
c
=0A;
V
EB
= −500 mV;
f=1MHz
--10pF
f
T
transition frequency I
C
= −10 mA;
V
CE
= −20 V;
f = 100 MHz
250 - - MHz
NF noise figure I
C
= −100 µA;
V
CE
= −5 V; R
S
=1kΩ;
f = 10 Hz to 15.7 kHz
--4dB