Datasheet

2004 Jan 21 4
NXP Semiconductors Product data sheet
NPN switching transistor PMST3904
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= 30 V − 50 nA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= 6 V − 50 nA
h
FE
DC current gain V
CE
= 1 V; see Fig.2; note 1
I
C
= 0.1 mA 60 −
I
C
= 1 mA 80 −
I
C
= 10 mA 100 300
I
C
= 50 mA 60 −
I
C
= 100 mA 30 −
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 1 mA − 200 mV
I
C
= 50 mA; I
B
= 5 mA − 300 mV
V
BEsat
base-emitter saturation voltage I
C
= 10 mA; I
B
= 1 mA 650 850 mV
I
C
= 50 mA; I
B
= 5 mA − 950 mV
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= 5 V; f = 1 MHz − 4 pF
C
e
emitter capacitance I
C
= I
c
= 0; V
BE
= 500 mV;
f
= 1 MHz
− 8 pF
f
T
transition frequency I
C
= 10 mA; V
CE
= 20 V;
f
= 100 MHz
300 − MHz
F noise figure I
C
= 100 µA; V
CE
= 5 V; R
S
= 1 kΩ;
f
= 10 Hz to 15.7 kHz
− 5 dB
Switching times (between 10% and 90% levels); see Fig.7
t
d
delay time I
Con
= 10 mA; I
Bon
= 1 mA;
I
Boff
= −1 mA
− 35 ns
t
r
rise time − 35 ns
t
s
storage time − 200 ns
t
f
fall time − 50 ns