Datasheet

2004 Jan 21 2
NXP Semiconductors Product data sheet
NPN switching transistor PMST3904
FEATURES
• Collector current capability I
C
= 200 mA
• Collector-emitter voltage V
CEO
= 40 V.
APPLICATIONS
• General amplification and switching.
DESCRIPTION
NPN switching transistor in a SOT323 plastic package.
PNP complement: PMST3906.
MARKING
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE
(1)
PMST3904 ∗1A
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 40 V
I
C
collector current (DC) 200 mA
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT323) and symbol.
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PMST3904 − plastic surface mounted package; 3 leads SOT323