Datasheet

2001 Nov 19 3
Philips Semiconductors Product specification
PNP switching transistor PMST2907A
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= −50 V −−10 nA
I
E
= 0; V
CB
= −50 V; T
j
= 150 °C −−10 µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= −3V −−50 nA
h
FE
DC current gain V
CE
= −10 V
I
C
= −0.1 mA 75 −
I
C
= −1 mA 100 −
I
C
= −10 mA; note 1 100 −
I
C
= −150 mA; note 1 100 300
I
C
= −500 mA; note 1 50 −
V
CEsat
collector-emitter saturation
voltage
I
C
= −150 mA; I
B
= −15 mA; note 1 −−400 mV
I
C
= −500 mA; I
B
= −50 mA; note 1 −−1.6 V
V
BEsat
base-emitter saturation voltage I
C
= −150 mA; I
B
= −15 mA; note 1 −−1.3 V
I
C
= −500 mA; I
B
= −50 mA; note 1 −−2.6 V
C
c
collector capacitance I
E
=i
e
= 0; V
CB
= −10 V; f = 1 MHz − 8pF
C
e
emitter capacitance I
C
=i
c
= 0; V
EB
= −2 V; f = 1 MHz − 30 pF
f
T
transition frequency I
C
= −50 mA; V
CE
= −20 V;
f = 100 MHz; note 1
200 − MHz
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
turn-on time I
Con
= −150 mA; I
Bon
= −15 mA;
I
Boff
=15mA
− 45 ns
t
d
delay time − 15 ns
t
r
rise time − 35 ns
t
off
turn-off time − 300 ns
t
s
storage time − 250 ns
t
f
fall time − 50 ns