Datasheet

1999 Apr 22 3
NXP Semiconductors Product data sheet
NPN switching transistors PMST2222; PMST2222A
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= 50 V 10 nA
PMST2222 I
E
= 0; V
CB
= 50 V; T
j
= 125 °C 10 µA
collector cut-off current I
E
= 0; V
CB
= 60 V 10 nA
PMST2222A I
E
= 0; V
CB
= 60 V; T
j
= 125 °C 10 µA
I
EBO
collector cut-off current I
C
= 0; V
EB
= 3 V 10 nA
h
FE
DC current gain I
C
= 0.1 mA; V
CE
= 10 V 35
I
C
= 1 mA; V
CE
= 10 V 50
I
C
= 10 mA; V
CE
= 10 V 75
I
C
= 10 mA; V
CE
= 10 V; T
amb
= 55 °C 35
I
C
= 150 mA; V
CE
= 1 V; note 1 50
I
C
= 150 mA; V
CE
= 10 V; note 1 100 300
DC current gain I
C
= 500 mA; V
CE
= 10 V; note 1
PMST2222 30
PMST2222A 40
V
CEsat
collector-emitter saturation voltage I
C
= 150 mA; I
B
= 15 mA; note 1 400 mV
PMST2222 I
C
= 500 mA; I
B
= 50 mA; note 1 1.6 V
collector-emitter saturation voltage I
C
= 150 mA; I
B
= 15 mA; note 1 300 mV
PMST2222A I
C
= 500 mA; I
B
= 50 mA; note 1 1 V
V
BEsat
base-emitter saturation voltage I
C
= 150 mA; I
B
= 15 mA; note 1 1.3 V
PMST2222 I
C
= 500 mA; I
B
= 50 mA; note 1 2.6 V
base-emitter saturation voltage I
C
= 150 mA; I
B
= 15 mA; note 1 0.6 1.2 V
PMST2222A I
C
= 500 mA; I
B
= 50 mA; note 1 2 V
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz 8 pF
C
e
emitter capacitance I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
PMST2222 30 pF
PMST2222A 25 pF
f
T
transition frequency I
C
= 20 mA; V
CE
= 20 V; f = 100 MHz
PMST2222 250 MHz
PMST2222A 300 MHz