Datasheet

2004 Jan 09 4
NXP Semiconductors Product data sheet
PNP switching transistor PMSS3906
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector-base cut-off current I
E
= 0; V
CB
= −30 V − −50 nA
I
E
= 0; V
CB
= −30 V; T
j
= 150 °C − −10 µA
I
EBO
emitter-base cut-off current I
C
= 0; V
EB
= −5 V − −50 nA
h
FE
DC current gain V
CE
= −1 V
I
C
= −0.1 mA 60 −
I
C
= −1 mA 80 −
I
C
= −10 mA 100 300
I
C
= −50 mA; note 1 60 −
I
C
= −100 mA; note 1 30 −
V
CEsat
collector-emitter saturation
voltage
I
C
= −10 mA; I
B
= −1 mA − −250 mV
I
C
= −50 mA; I
B
= −5 mA; note 1 − −400 mV
V
BEsat
base-emitter saturation voltage I
C
= −10 mA; I
B
= −1 mA − −850 mV
I
C
= −50 mA; I
B
= −5 mA; note 1 − −950 mV
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= −5 V; f = 1 MHz − 4.5 pF
C
e
emitter capacitance I
C
= i
c
= 0; V
EB
= −0.5 V; f = 1 MHz − 14 pF
f
T
transition frequency I
E
= −10 mA; V
CB
= −20 V; f = 100 MHz 150 − MHz
F noise figure I
C
= −100 µA; V
CE
= −5 V; R
S
= 1 kΩ;
f
= 10 Hz to 15.7 kHz
− 4 dB
Switching times (between 10% and 90% levels); see Fig.1
t
on
turn-on time I
Con
= −10 mA; I
Bon
= −1 mA; I
Boff
= 1 mA − 100 ns
t
d
delay time − 50 ns
t
r
rise time − 50 ns
t
off
turn-off time − 700 ns
t
s
storage time − 600 ns
t
f
fall time − 100 ns