Datasheet

2004 Jan 09 3
NXP Semiconductors Product data sheet
PNP switching transistor PMSS3906
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Transistor mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Transistor mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PMSS3906 − plastic surface mounted package; 3 leads SOT323
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − −40 V
V
CEO
collector-emitter voltage open base − −40 V
V
EBO
emitter-base voltage open collector − −5 V
I
C
collector current (DC) − −100 mA
I
CM
peak collector current − −200 mA
I
BM
peak base current − −100 mA
P
tot
total power dissipation T
amb
≤ 25 °C; notes 1 and 2 − 200 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient notes 1 and 2 625 K/W