Datasheet

2004 Jan 22 3
NXP Semiconductors Product data sheet
PNP high-voltage transistor PMBTA92
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= −200 V − −250 nA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= −3 V − −100 nA
h
FE
DC current gain V
CE
= −10 V; note 1
I
C
= −1 mA 25 −
I
C
= −10 mA 40 −
I
C
= −30 mA 25 −
V
CEsat
collector-emitter saturation voltage I
C
= −20 mA; I
B
= −2 mA − −500 mV
V
BEsat
base-emitter saturation voltage I
C
= −20 mA; I
B
= −2 mA − −900 mV
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= −20 V; f = 1 MHz − 6 pF
f
T
transition frequency I
C
= −10 mA; V
CE
= −20 V;
f
= 100 MHz
50 − MHz