Datasheet

2004 Jan 22 2
NXP Semiconductors Product data sheet
PNP Darlington transistor PMBTA64
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V)
• High DC current gain (min. 10 000).
APPLICATIONS
• High input impedance preamplifiers.
DESCRIPTION
PNP Darlington transistor in a SOT23 plastic package.
NPN
complement: PMBTA14.
MARKING
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE
(1)
PMBTA64 *2V
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
1
3
2
MAM299
13
2
TR2
TR1
Top view
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PMBTA64 − plastic surface mounted package; 3 leads SOT23
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − −30 V
V
CES
collector-emitter voltage V
BE
= 0 − −30 V
V
EBO
emitter-base voltage open collector − −10 V
I
C
collector current (DC) − −500 mA
I
CM
peak collector current − −800 mA
I
B
base current (DC) − −200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C