Datasheet

2004 Jan 09 3
NXP Semiconductors Product data sheet
PNP general purpose transistor PMBTA56
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= −80 V − −50 nA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= −5 V − −50 nA
h
FE
DC current gain I
C
= −10 mA; V
CE
= −1 V 100 −
I
C
= −100 mA; V
CE
= −1 V 100 −
V
CEsat
collector-emitter saturation voltage I
C
= −100 mA; I
B
= −10 mA − −250 mV
V
BE
base-emitter voltage I
C
= −100 mA; V
CE
= −1 V − −1.2 V
f
T
transition frequency I
C
= −100 mA; V
CE
= −1 V;
f
= 100 MHz
50 − MHz