Datasheet
PMBTA45_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 10 March 2010 7 of 13
NXP Semiconductors
PMBTA45
500 V, 150 mA NPN high-voltage low V
CEsat
(BISS) transistor
I
C
/I
B
=5
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
=20
(2) I
C
/I
B
=10
(3) I
C
/I
B
=5
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
/I
B
=5
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
=20
(2) I
C
/I
B
=10
(3) I
C
/I
B
=5
Fig 9. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
006aab724
I
C
(mA)
10
−1
10
3
10
2
110
10
−1
1
V
CEsat
(V)
10
−2
(3)
(1)
(2)
006aab725
I
C
(mA)
10
−1
10
3
10
2
110
10
−1
1
V
CEsat
(V)
10
−2
(3)
(2)
(1)
006aab726
10
1
10
3
10
2
10
4
R
CEsat
(Ω)
10
−1
I
C
(mA)
10
−1
10
3
10
2
110
(1)
(2)
(3)
006aab727
10
1
10
3
10
2
10
4
R
CEsat
(Ω)
10
−1
I
C
(mA)
10
−1
10
3
10
2
110
(3)
(2)
(1)