Datasheet
PMBTA45_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 10 March 2010 5 of 13
NXP Semiconductors
PMBTA45
500 V, 150 mA NPN high-voltage low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=360V; I
E
= 0 A - - 100 nA
V
CB
=360V; I
E
=0A;
T
j
= 150 °C
--10μA
I
CES
collector-emitter
cut-off current
V
CE
=360V; V
BE
= 0 V - - 100 nA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=10V
I
C
= 30 mA 50 100 -
I
C
=50mA
[1]
50 100 -
V
CEsat
collector-emitter
saturation voltage
I
C
=20mA; I
B
=2mA - 60 75 mV
I
C
=50mA; I
B
=6mA
[1]
-6590mV
V
BEsat
base-emitter
saturation voltage
I
C
=50mA; I
B
=5mA
[1]
- 0.75 0.9 V
f
T
transition frequency V
CE
=10V; I
E
=10mA;
f = 100 MHz
-35-MHz
C
c
collector capacitance V
CB
=20V; I
E
=i
e
=0A;
f=1MHz
-4-pF
C
e
emitter capacitance V
EB
=0.5V;
I
C
=i
c
=0A; f=1MHz
- 200 - pF
t
d
delay time V
CC
=20V; I
C
=0.05A;
I
Bon
=5mA;
I
Boff
= −10 mA
-80-ns
t
r
rise time - 2700 - ns
t
on
turn-on time - 2780 - ns
t
s
storage time - 3400 - ns
t
f
fall time - 800 - ns
t
off
turn-off time - 4200 - ns