Datasheet

PMBTA45_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 10 March 2010 3 of 13
NXP Semiconductors
PMBTA45
500 V, 150 mA NPN high-voltage low V
CEsat
(BISS) transistor
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 500 V
V
CEO
collector-emitter voltage open base - 500 V
V
CESM
collector-emitter peak voltage V
BE
=0V - 500 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 0.15 A
I
CM
peak collector current single pulse;
t
p
1ms
-0.5A
I
BM
peak base current single pulse;
t
p
1ms
-200mA
P
tot
total power dissipation T
amb
25 °C
[1]
-300mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature 55 +150 °C
T
stg
storage temperature 65 +150 °C
FR4 PCB, standard footprint
Fig 1. Power derating curve
T
amb
(°C)
75 17512525 7525
006aab150
200
100
300
400
P
tot
(mW)
0