Datasheet
1. Product profile
1.1 General description
NPN high-voltage low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a
SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9050T.
1.2 Features and benefits
High voltage
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
AEC-Q101 qualified
1.3 Applications
Electronic ballasts
LED driver for LED chain module
LCD backlighting
Automotive motor management
Flyback converters
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
1.4 Quick reference data
PMBTA45
500 V, 150 mA NPN high-voltage low V
CEsat
(BISS) transistor
Rev. 02 — 10 March 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CESM
collector-emitter peak
voltage
V
BE
= 0 V - - 500 V
V
CEO
collector-emitter voltage open base - - 500 V
I
C
collector current - - 0.15 A
h
FE
DC current gain V
CE
=10V; I
C
= 30 mA 50 100 -