Datasheet

PMBTA44_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 22 February 2008 5 of 12
NXP Semiconductors
PMBTA44
400 V, 0.3 A NPN high-voltage low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= 320 V; I
E
= 0 A - - 100 nA
V
CB
= 320 V; I
E
=0A;
T
j
= 150 °C
--10µA
I
EBO
emitter-base cut-off
current
V
EB
=4V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=10V
I
C
= 10 mA 50 - 200
I
C
=50mA
[1]
45 - -
I
C
= 100 mA
[1]
40 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 1 mA; I
B
= 0.1 mA - - 400 mV
I
C
= 10 mA; I
B
= 1 mA - - 500 mV
I
C
= 50 mA; I
B
=5mA
[1]
- - 750 mV
V
BEsat
base-emitter
saturation voltage
I
C
= 10 mA; I
B
=1mA
[1]
- - 850 mV
f
T
transition frequency V
CE
=10V; I
E
=10mA;
f = 100 MHz
20 - - MHz
C
c
collector capacitance V
CB
=20V;I
E
=i
e
=0A;
f=1MHz
--7pF
C
e
emitter capacitance V
EB
= 0.5 V;
I
C
=i
c
= 0 A; f = 1 MHz
- - 180 pF