Datasheet

PMBTA42_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 12 December 2008 3 of 9
NXP Semiconductors
PMBTA42
300 V, 100 mA NPN high-voltage transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 500 K/W
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=200V; I
E
= 0 A - - 100 nA
I
EBO
emitter-base cut-off
current
V
EB
=6V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=10V
I
C
=1mA 25 - -
I
C
=10mA 40 - -
I
C
=30mA 40 - -
V
CEsat
collector-emitter
saturation voltage
I
C
=20mA; I
B
= 2 mA - - 500 mV
V
BEsat
base-emitter saturation
voltage
I
C
=20mA; I
B
= 2 mA - - 900 mV
C
re
feedback capacitance V
CB
=20V; I
C
=i
c
=0A;
f=1MHz
--3pF
f
T
transition frequency V
CE
=20V; I
C
=10mA;
f=100MHz
50--MHz