Datasheet

PMBTA42_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 12 December 2008 2 of 9
NXP Semiconductors
PMBTA42
300 V, 100 mA NPN high-voltage transistor
3. Ordering information
[1] /DG: halogen-free
4. Marking
[1] /DG: halogen-free
[2] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 3. Ordering information
Type number
[1]
Package
Name Description Version
PMBTA42 - plastic surface-mounted package; 3 leads SOT23
PMBTA42/DG
Table 4. Marking codes
Type number
[1]
Marking code
[2]
PMBTA42 *1D
PMBTA42/DG *BV
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 300 V
V
CEO
collector-emitter voltage open base - 300 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 100 mA
I
CM
peak collector current single pulse;
t
p
≤ 1ms
-200mA
I
BM
peak base current single pulse;
t
p
≤ 1ms
-100mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-250mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C