Datasheet

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1. Product profile

1.1 General description

NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted

Device (SMD) plastic package.

PNP complement: PMBTA92.

1.2 Features

 High voltage (max. 300 V)

1.3 Applications

 Telephony and professional communication equipment

1.4 Quick reference data

2. Pinning information

PMBTA42

300 V, 100 mA NPN high-voltage transistor

Rev. 05 — 12 December 2008 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - 300 V

collector current - - 100 mA

DC current gain V

=10V

=1mA 25 - -

=10mA 40 - -

=30mA 40 - -

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 base

2 emitter

3collector

sym02

Summary of content (9 pages)

PAGE 1
PMBTA42 300 V, 100 mA NPN high-voltage transistor Rev. 05 — 12 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA92. 1.2 Features High voltage (max. 300 V) 1.3 Applications Telephony and professional communication equipment 1.4 Quick reference data Table 1.
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PMBTA42 NXP Semiconductors 300 V, 100 mA NPN high-voltage transistor 3. Ordering information Table 3. Ordering information Type number[1] PMBTA42 Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 PMBTA42/DG [1] /DG: halogen-free 4. Marking Table 4. Marking codes Type number[1] Marking code[2] PMBTA42 *1D PMBTA42/DG *BV [1] [2] /DG: halogen-free * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5.
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PMBTA42 NXP Semiconductors 300 V, 100 mA NPN high-voltage transistor 6. Thermal characteristics Table 6. Symbol Rth(j-a) [1] Thermal characteristics Parameter Conditions thermal resistance from junction to ambient in free air [1] Min Typ Max Unit - - 500 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
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PMBTA42 NXP Semiconductors 300 V, 100 mA NPN high-voltage transistor 8. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 Fig 1.
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PMBTA42 NXP Semiconductors 300 V, 100 mA NPN high-voltage transistor 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PMBTA42 Package Description SOT23 Packing quantity 4 mm pitch, 8 mm tape and reel 3000 10000 -215 -235 PMBTA42/DG [1] For further information and the availability of packing methods, see Section 13. [2] /DG: halogen-free 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.
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PMBTA42 NXP Semiconductors 300 V, 100 mA NPN high-voltage transistor 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 Fig 3. Wave soldering footprint SOT23 (TO-236AB) PMBTA42_5 Product data sheet sot023_fw © NXP B.V. 2008. All rights reserved. Rev.
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PMBTA42 NXP Semiconductors 300 V, 100 mA NPN high-voltage transistor 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMBTA42_5 20081212 Product data sheet - PMBTA42_4 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • Legal texts have been adapted to the new company name where appropriate.
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PMBTA42 NXP Semiconductors 300 V, 100 mA NPN high-voltage transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PMBTA42 NXP Semiconductors 300 V, 100 mA NPN high-voltage transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Quick reference data . . . . . . . . . . . . . . . . . . . . Pinning information . . . . .