Datasheet

2004 Jan 22 3
NXP Semiconductors Product data sheet
NPN Darlington transistors PMBTA13; PMBTA14
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 30 V
V
CES
collector-emitter voltage V
BE
= 0 − 30 V
V
EBO
emitter-base voltage open collector − 10 V
I
C
collector current (DC) − 500 mA
I
CM
peak collector current − 800 mA
I
B
base current (DC) − 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= 30 V − 100 nA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= 10 V − 100 nA
h
FE
DC current gain I
C
= 10 mA; V
CE
= 5 V; (see Fig.2)
PMBTA13 5 000 −
PMBTA14 10 000 −
DC current gain I
C
= 100 mA; V
CE
= 5 V; (see Fig.2)
PMBTA13 10 000 −
PMBTA14 20 000 −
V
CEsat
collector-emitter saturation voltage I
C
= 100 mA; I
B
= 0.1 mA − 1.5 V
V
BEon
base-emitter on-state voltage I
C
= 100 mA; V
CE
= 5 V − 1.4 V
f
T
transition frequency I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz 125 − MHz