Datasheet

2004 Jan 22 3
NXP Semiconductors Product data sheet
NPN general purpose transistor PMBTA06
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= 80 V − 50 nA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= 5 V − 50 nA
h
FE
DC current gain I
C
= 10 mA; V
CE
= 1 V 100 −
I
C
= 100 mA; V
CE
= 1 V 100 −
V
CEsat
collector-emitter saturation voltage I
C
= 100 mA; I
B
= 10 mA − 0.25 V
V
BE
base-emitter voltage I
C
= 100 mA; V
CE
= 1 V − 1.2 V
f
T
transition frequency I
C
= 10 mA; V
CE
= 2 V; f = 100 MHz 100 − MHz