Datasheet

2004 Jan 22 4
NXP Semiconductors Product data sheet
NPN general purpose transistors PMBT6428; PMBT6429
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= 30 V − 10 nA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= 5 V − 10 nA
h
FE
DC current gain I
C
= 0.1 mA; V
CE
= 5 V
PMBT6428 250 650
PMBT6429 500 1 250
DC current gain I
C
= 1 mA; V
CE
= 5 V
PMBT6428 250 −
PMBT6429 500 −
DC current gain I
C
= 10 mA; V
CE
= 5 V
PMBT6428 250 −
PMBT6429 500 −
V
CEsat
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA − 200 mV
I
C
= 100 mA; I
B
= 5 mA − 600 mV
V
BE
base-emitter voltage I
C
= 1 mA; V
CE
= 5 V 560 660 mV
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz − 3 pF
C
e
emitter capacitance I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz − 12 pF
f
T
transition frequency I
C
= 1 mA; V
CE
= 5 V; f = 100 MHz 100 700 MHz