Datasheet

2004 Jan 21 3
NXP Semiconductors Product data sheet
NPN high-voltage transistor PMBT5551
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector-base cut-off current I
E
= 0; V
CB
= 120 V − 50 nA
I
E
= 0; V
CB
= 120 V; T
amb
= 100 °C − 50 µA
I
EBO
emitter-base cut-off current I
C
= 0; V
EB
= 4 V − 50 nA
h
FE
DC current gain V
CE
= 5 V; (see Fig.2)
I
C
= 1 mA 80 −
I
C
= 10 mA 80 250
I
C
= 50 mA 30 −
V
CEsat
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 1 mA − 150 mV
I
C
= 50 mA; I
B
= 5 mA − 200 mV
V
BEsat
base-emitter saturation voltage I
C
= 10 mA; I
B
= 1 mA − 1 V
I
C
= 50 mA; I
B
= 5 mA − 1 V
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz − 6 pF
C
e
emitter capacitance I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz − 30 pF
f
T
transition frequency I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz 100 300 MHz
F noise figure I
C
= 200 µA; V
CE
= 5 V; R
S
= 2 kΩ;
f
= 10 Hz to 15.7 kHz
− 8 dB