Datasheet

2004 Jan 21 2
NXP Semiconductors Product data sheet
NPN high-voltage transistor PMBT5551
FEATURES
• Low current (max. 300 mA)
• High voltage (max. 160 V).
APPLICATIONS
• General purpose
• Telephony.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
PNP
complement: PMBT5401.
MARKING
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE
(1)
PMBT5551 *G1
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
21
3
MAM255
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PMBT5551 − plastic surface mounted package; 3 leads SOT23
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 180 V
V
CEO
collector-emitter voltage open base − 160 V
V
EBO
emitter-base voltage open collector − 6 V
I
C
collector current (DC) − 300 mA
I
CM
peak collector current − 600 mA
I
BM
peak base current − 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C