Datasheet

2004 Jan 21 3
NXP Semiconductors Product data sheet
PNP switching transistor PMBT4403
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector-base cut-off current I
E
= 0; V
CB
= −40 V − −50 nA
I
EBO
emitter-base cut-off current I
C
= 0; V
EB
= −5 V − −50 nA
h
FE
DC current gain V
CE
= −1 V; (see Fig.2)
I
C
= −0.1 mA 30 −
I
C
= −1 mA 60 −
I
C
= −10 mA 100 −
V
CE
= −2 V
I
C
= −150 mA 100 300
I
C
= −500 mA 20 −
V
CEsat
collector-emitter saturation
voltage
I
C
= −150 mA; I
B
= −15 mA − −400 mV
I
C
= −500 mA; I
B
= −50 mA − −750 mV
V
BEsat
base-emitter saturation voltage I
C
= −150 mA; I
B
= −15 mA − −950 mV
I
C
= −500 mA; I
B
= −50 mA − −1.3 V
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= −10 V; f = 1 MHz − 8.5 pF
C
e
emitter capacitance I
C
= I
c
= 0; V
EB
= −500 mV; f = 1 MHz − 35 pF
f
T
transition frequency I
C
= −20 mA; V
CE
= −10 V; f = 100 MHz 200 − MHz
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
turn-on time I
Con
= −150 mA; I
Bon
= −15 mA;
I
Boff
= 15 mA
− 40 ns
t
d
delay time − 15 ns
t
r
rise time − 30 ns
t
off
turn-off time − 350 ns
t
s
storage time − 300 ns
t
f
fall time − 50 ns