Datasheet
2004 Jan 21 4
NXP Semiconductors Product data sheet
NPN switching transistor PMBT4401
handbook, full pagewidth
0
300
100
200
MGD811
10
−1
11010
2
10
3
h
FE
I
C
mA
V
CE
= 1 V
Fig.2 DC current gain; typical values.
handbook, full pagewidth
R
C
R2
R1
DUT
MLB826
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
i
V
CC
Fig.3 Test circuit for switching times.
V
i
= 9.5 V; T = 500 µs; t
p
= 10 µs; t
r
= t
f
≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; R
B
= 325 Ω; R
C
= 160 Ω.
V
BB
= −3.5 V; V
CC
= 29.5 V.
Oscilloscope: input impedance Z
i
= 50 Ω.