Datasheet

2004 Jan 21 2
NXP Semiconductors Product data sheet
NPN switching transistor PMBT4401
FEATURES
High current (max. 600 mA)
Low voltage (max. 40 V).
APPLICATIONS
Industrial and consumer switching applications.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP
complement: PMBT4403.
MARKING
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE
(1)
PMBT4401 *2X
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM255
Top view
2
3
1
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PMBT4401 plastic surface mounted package; 3 leads SOT23
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter 60 V
V
CEO
collector-emitter voltage open base 40 V
V
EBO
emitter-base voltage open collector 6 V
I
C
collector current (DC) 600 mA
I
CM
peak collector current 800 mA
I
BM
peak base current 200 mA
P
tot
total power dissipation T
amb
25 °C; note 1 250 mW
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 150 °C
T
amb
operating ambient temperature 65 +150 °C