Datasheet
PMBT3946YPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 12 May 2009 6 of 15
NXP Semiconductors
PMBT3946YPN
40 V, 200 mA NPN/PNP general-purpose double transistor
TR2 (PNP)
I
CBO
collector-base cut-off
current
V
CB
= −30 V; I
E
=0A - - −50 nA
I
EBO
emitter-base cut-off
current
V
EB
= −6 V; I
C
=0A - - −50 nA
h
FE
DC current gain V
CE
= −1V
I
C
= −0.1 mA 60 180 -
I
C
= −1 mA 80 180 -
I
C
= −10 mA 100 180 300
I
C
= −50 mA 60 130 -
I
C
= −100 mA 30 50 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −10 mA; I
B
= −1mA - −100 −250 mV
I
C
= −50 mA; I
B
= −5mA - −165 −400 mV
V
BEsat
base-emitter saturation
voltage
I
C
= −10 mA; I
B
= −1mA - −750 −850 mV
I
C
= −50 mA; I
B
= −5mA - −850 −950 mV
f
T
transition frequency V
CE
= −20 V; I
C
= −10 mA;
f = 100 MHz
250 - - MHz
C
c
collector capacitance V
CB
= −5 V; I
E
=i
e
=0A;
f=1MHz
- - 4.5 pF
C
e
emitter capacitance V
CB
= −0.5 V; I
C
=i
c
=0A;
f=1MHz
--10pF
NF noise figure V
CE
= −5 V; I
C
= −100 µA;
R
S
=1kΩ;
f = 10 Hz to 15.7 kHz
--4dB
t
d
delay time V
CC
= −3 V; I
C
= −10 mA;
I
Bon
= −1 mA; I
Boff
=1mA
--35ns
t
r
rise time - - 35 ns
t
on
turn-on time - - 70 ns
t
s
storage time - - 225 ns
t
f
fall time - - 75 ns
t
off
turn-off time - - 300 ns
Table 8. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit