Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsBJTs & IGBTsTransistor

1. Product proﬁle

1.1 General description

NPN/PNP general-purpose double transistor in a SOT363 (SC-88) very small

Surface-Mounted Device (SMD) plastic package.

1.2 Features

n General-purpose double transistor

n Board-space reduction

1.3 Applications

n General-purpose switching and ampliﬁcation

1.4 Quick reference data

PMBT3946YPN

40 V, 200 mA NPN/PNP general-purpose double transistor

Rev. 01 — 12 May 2009 Product data sheet

Table 1. Product overview

Type number Package NPN/NPN

complement

PNP/PNP

complement

Package

conﬁguration

NXP JEITA

PMBT3946YPN SOT363 SC-88 PMBT3904YS PMBT3906YS very small

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor; for the PNP transistor with negative polarity

CEO

collector-emitter voltage open base - - 40 V

collector current - - 200 mA

DC current gain V

=1V;

=10mA

100 180 300

Summary of content (15 pages)

PAGE 1
PMBT3946YPN 40 V, 200 mA NPN/PNP general-purpose double transistor Rev. 01 — 12 May 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NXP PMBT3946YPN SOT363 JEITA NPN/NPN complement PNP/PNP complement Package configuration SC-88 PMBT3904YS PMBT3906YS very small Min Max 1.
PAGE 2
PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 2. Pinning information Table 3. Pinning Pin Description 1 emitter TR1 2 base TR1 3 collector TR2 4 emitter TR2 5 base TR2 6 collector TR1 Simplified outline 6 5 4 Graphic symbol 6 5 4 TR2 TR1 1 2 3 1 2 3 sym019 3. Ordering information Table 4. Ordering information Type number Package Name PMBT3946YPN SC-88 Description Version plastic surface-mounted package; 6 leads SOT363 4.
PAGE 3
PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 4
PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 6. Thermal characteristics Table 7.
PAGE 5
PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 30 V; IE = 0 A - - 50 nA IEBO emitter-base cut-off current VEB = 6 V; IC = 0 A - - 50 nA hFE DC current gain VCE = 1 V IC = 0.
PAGE 6
PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −30 V; IE = 0 A - - −50 nA IEBO emitter-base cut-off current VEB = −6 V; IC = 0 A - - −50 nA hFE DC current gain VCE = −1 V TR2 (PNP) IC = −0.
PAGE 7
PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 006aab115 600 006aab116 0.20 IB (mA) = 5.0 4.5 4.0 3.5 3.0 2.5 IC (A) hFE 0.15 400 2.0 (1) 1.5 1.0 0.10 0.5 (2) 200 0.05 (3) 0 10−1 1 10 102 0.0 103 0 2 4 6 8 IC (mA) 10 VCE (V) Tamb = 25 °C VCE = 1 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3. TR1 (NPN): DC current gain as a function of collector current; typical values Fig 4. 006aab117 1.
PAGE 8
PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 006aab119 1 VCEsat (V) 10−1 (1) (2) (3) 10−2 10−1 1 10 102 103 IC (mA) IC/IB = 10 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 7. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values PMBT3946YPN_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
PAGE 9
PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 006aab120 400 hFE 006aab121 −0.3 (1) IB (mA) = −5.0 −4.5 −4.0 −3.5 −3.0 IC (A) 300 −2.5 −2.0 −0.2 −1.5 200 −1.0 (2) −0.1 −0.5 (3) 100 0 −10−1 −1 −10 −102 0 −103 0 −2 −4 −6 IC (mA) VCE = −1 V −8 −10 VCE (V) Tamb = 25 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 8. TR2 (PNP): DC current gain as a function of collector current; typical values 006aab123 −1.2 Fig 9.
PAGE 10
PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 006aab122 −1 VCEsat (V) (1) −10−1 (2) (3) −10−2 −10−1 −1 −10 −102 −103 IC (mA) IC/IB = 10 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 12. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values 8. Test information VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mlb826 Fig 13.
PAGE 11
PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor VBB RB oscilloscope VCC RC Vo (probe) (probe) 450 Ω 450 Ω oscilloscope R2 VI DUT R1 mgd624 Fig 14. TR2 (PNP): Test circuit for switching times 9. Package outline 2.2 1.8 6 2.2 1.35 2.0 1.15 1.1 0.8 5 4 2 3 0.45 0.15 pin 1 index 1 0.3 0.2 0.65 0.25 0.10 1.3 Dimensions in mm 06-03-16 Fig 15. Package outline SOT363 (SC-88) 10. Packing information Table 9.
PAGE 12
PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 11. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 16. Reflow soldering footprint SOT363 (SC-88) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 17.
PAGE 13
PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PMBT3946YPN_1 20090512 Product data sheet - - PMBT3946YPN_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
PAGE 14
PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 15
PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .