Datasheet

PMBT3906VS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 20 August 2009 5 of 11
NXP Semiconductors
PMBT3906VS
40 V, 200 mA PNP/PNP switching transistor
C
c
collector capacitance V
CB
= −5V;I
E
=i
e
=0A;
f=1MHz
- - 4.5 pF
C
e
emitter capacitance V
EB
= −500 mV;
I
C
=i
c
= 0 A; f = 1 MHz
--10pF
f
T
transition frequency V
CE
= −20 V;
I
C
= −10 mA;
f = 100 MHz
250 - - MHz
NF noise figure V
CE
= −5V;
I
C
= −100 µA;R
S
=1kΩ;
f = 10 Hz to 15.7 kHz
--4dB
Table 8. Characteristics
…continued
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
CE
= −1V
(1) T
amb
= 150 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 3. Per transistor:
DC current gain as a function of collector
current; typical values
Fig 4. Per transistor:
Collector current as a function of
collector-emitter voltage; typical values
006aab120
200
100
300
400
h
FE
0
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
(1)
(2)
(3)
V
CE
(V)
0 −10−8−4 −6−2
006aab121
−0.1
−0.2
−0.3
I
C
(A)
0
I
B
(mA) = −5.0
−4.5
−4.0
−3.5
−3.0
−0.5
−1.0
−2.5
−1.5
−2.0