Datasheet

PMBT3906VS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 20 August 2009 4 of 11
NXP Semiconductors
PMBT3906VS
40 V, 200 mA PNP/PNP switching transistor
7. Characteristics
FR4 PCB, standard footprint
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aab605
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base cut-off
current
V
CB
= −30 V; I
E
=0A - - −50 nA
I
EBO
emitter-base cut-off
current
V
EB
= −6 V; I
C
=0A - - −50 nA
h
FE
DC current gain V
CE
= −1V
I
C
= −0.1 mA 60 180 -
I
C
= −1 mA 80 180 -
I
C
= −10 mA 100 180 300
I
C
= −50 mA 60 130 -
I
C
= −100 mA 30 50 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −10 mA; I
B
= −1mA - −100 −250 mV
I
C
= −50 mA; I
B
= −5mA - −165 −400 mV
V
BEsat
base-emitter
saturation voltage
I
C
= −10 mA; I
B
= −1mA - −750 −850 mV
I
C
= −50 mA; I
B
= −5mA - −850 −950 mV
t
d
delay time V
CC
= −3V;
I
C
= −10 mA;
I
Bon
= −1 mA;
I
Boff
=1mA
--35ns
t
r
rise time - - 35 ns
t
on
turn-on time - - 70 ns
t
s
storage time - - 225 ns
t
f
fall time - - 75 ns
t
off
turn-off time - - 300 ns