Datasheet

PMBT3906VS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 20 August 2009 2 of 11
NXP Semiconductors
PMBT3906VS
40 V, 200 mA PNP/PNP switching transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1
123
456
sym018
2
1
3
5
6
TR1
TR2
4
Table 4. Ordering information
Type number Package
Name Description Version
PMBT3906VS - plastic surface-mounted package; 6 leads SOT666
Table 5. Marking codes
Type number Marking code
PMBT3906VS ZD
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - −40 V
V
CEO
collector-emitter voltage open base - −40 V
V
EBO
emitter-base voltage open collector - −6V
I
C
collector current - −200 mA
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −200 mA
I
BM
peak base current single pulse;
t
p
≤ 1ms
- −100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1][2]
- 240 mW
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
[1][2]
- 360 mW