Datasheet

PMBT3906_6 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 06 — 2 March 2010 3 of 11
NXP Semiconductors
PMBT3906
PNP switching transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB.
7. Characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
--500K/W
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −30 V; I
E
=0A - - −50 nA
I
EBO
emitter-base cut-off
current
V
EB
= −6V; I
C
=0A - - −50 nA
h
FE
DC current gain V
CE
= −1V
I
C
= −0.1 mA 60 - -
I
C
= −1mA 80 - -
I
C
= −10 mA 100 - 300
I
C
= −50 mA 60 - -
I
C
= −100 mA 30 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= −10 mA; I
B
= −1mA - - −250 mV
I
C
= −50 mA; I
B
= −5mA - - −400 mV
V
BEsat
base-emitter
saturation voltage
I
C
= −10 mA; I
B
= −1mA - - −850 mV
I
C
= −50 mA; I
B
= −5mA - - −950 mV
t
d
delay time I
Con
= −10 mA;
I
Bon
= −1mA;
I
Boff
=1mA
--35ns
t
r
rise time - - 35 ns
t
on
turn-on time - - 70 ns
t
s
storage time - - 225 ns
t
f
fall time - - 75 ns
t
off
turn-off time - - 300 ns
f
T
transition frequency V
CE
= −20 V;
I
C
= −10 mA;
f=100MHz
250 - - MHz
C
c
collector capacitance V
CB
= −5V; I
E
=i
e
=0A;
f=1MHz
--4.5pF
C
e
emitter capacitance V
EB
= −500 mV;
I
C
=i
c
=0A; f=1MHz
--10pF
NF noise figure I
C
= −100 μA;
V
CE
= −5V; R
S
=1kΩ;
f = 10 Hz to 15.7 kHz
--4dB