Datasheet

PMBT3906_6 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 06 — 2 March 2010 2 of 11
NXP Semiconductors
PMBT3906
PNP switching transistor
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
Table 3. Ordering information
Type number Package
Name Description Version
PMBT3906 - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
PMBT3906 *2A
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −40 V
V
CEO
collector-emitter voltage open base - −40 V
V
EBO
emitter-base voltage open collector - −6V
I
C
collector current - −200 mA
I
CM
peak collector current - −200 mA
I
BM
peak base current - −100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-250mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C