Datasheet

PMBT3904YS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 12 May 2009 5 of 12
NXP Semiconductors
PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
7. Characteristics
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base cut-off
current
V
CB
=30V; I
E
=0A --50nA
I
EBO
emitter-base cut-off
current
V
EB
=6V; I
C
=0A --50nA
h
FE
DC current gain V
CE
=1V
I
C
= 0.1 mA 60 180 -
I
C
= 1 mA 80 180 -
I
C
= 10 mA 100 180 300
I
C
= 50 mA 60 105 -
I
C
= 100 mA 30 50 -
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA; I
B
= 1 mA - 75 200 mV
I
C
= 50 mA; I
B
= 5 mA - 120 300 mV
V
BEsat
base-emitter
saturation voltage
I
C
= 10 mA; I
B
= 1 mA 650 750 850 mV
I
C
= 50 mA; I
B
= 5 mA - 850 950 mV
f
T
transition frequency V
CE
=20V; I
C
=10mA;
f = 100 MHz
300 - - MHz
C
c
collector capacitance V
CB
=5V; I
E
=i
e
=0A;
f=1MHz
--4pF
C
e
emitter capacitance V
BE
= 0.5 V; I
C
=i
c
=0A;
f=1MHz
--8pF
NF noise figure V
CE
=5V; I
C
= 100 µA;
R
S
=1kΩ;
f = 10 Hz to 15.7 kHz
--5dB
t
d
delay time V
CC
=3V; I
C
=10mA;
I
Bon
= 1 mA; I
Boff
= −1mA
--35ns
t
r
rise time - - 35 ns
t
on
turn-on time - - 70 ns
t
s
storage time - - 200 ns
t
f
fall time - - 50 ns
t
off
turn-off time - - 250 ns