Datasheet

PMBT3904YS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 12 May 2009 3 of 12
NXP Semiconductors
PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - 60 V
V
CEO
collector-emitter voltage open base - 40 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 200 mA
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- 200 mA
I
BM
peak base current single pulse;
t
p
≤ 1ms
- 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 230 mW
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 350 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
FR4 PCB, standard footprint
Fig 1. Per device: Power derating curve
006aab113
T
amb
(°C)
−75 17575−25 12525
200
100
300
400
P
tot
(mW)
0