Datasheet

PMBT3904VS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 8 July 2009 5 of 11
NXP Semiconductors
PMBT3904VS
40 V, 200 mA NPN/NPN switching transistor
C
c
collector capacitance V
CB
=5V; I
E
=i
e
=0A;
f=1MHz
--4pF
C
e
emitter capacitance V
EB
= 500 mV;
I
C
=i
c
= 0 A; f = 1 MHz
--8pF
f
T
transition frequency V
CE
=20V; I
C
=10mA;
f = 100 MHz
300 - - MHz
NF noise figure V
CE
=5V; I
C
= 100 µA;
R
S
=1kΩ;
f = 10 Hz to 15.7 kHz
--5dB
Table 8. Characteristics
…continued
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
CE
=1V
(1) T
amb
= 150 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 3. Per transistor:
DC current gain as a function of collector
current; typical values
Fig 4. Per transistor:
Collector current as a function of
collector-emitter voltage; typical values
006aab115
200
400
600
h
FE
0
I
C
(mA)
10
−1
10
3
10
2
110
(1)
(2)
(3)
V
CE
(V)
0108462
006aab116
0.10
0.05
0.15
0.20
I
C
(A)
0.0
I
B
(mA) = 5.0
4.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4.0