Datasheet

PMBT2222_PMBT2222A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 6 — 12 November 2010 4 of 12
NXP Semiconductors
PMBT2222; PMBT2222A
NPN switching transistors
7. Characteristics
Table 8. Characteristics
T
j
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
PMBT2222 V
CB
=50V; I
E
=0A - - 10 nA
V
CB
=50V; I
E
=0A;
T
j
= 125 °C
--10μA
collector-base cut-off
current
PMBT2222A V
CB
=60V; I
E
=0A - - 10 nA
V
CB
=60V; I
E
=0A;
T
j
= 125 °C
--10μA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
=0A - - 10 nA
h
FE
DC current gain V
CE
=10V;
I
C
=0.1mA
35
V
CE
=10V;
I
C
=1mA
50 - -
V
CE
=10V;
I
C
=10mA
75 - -
V
CE
=10V;
I
C
=10mA;
T
amb
= −55 °C
35 - -
V
CE
=10V;
I
C
= 150 mA
[1]
100 - 300
V
CE
=1V;
I
C
= 150 mA
[1]
50 - -
DC current gain V
CE
=10V;
I
C
= 500 mA
[1]
PMBT2222 30 - -
PMBT2222A 40 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 150 mA;
I
B
=15mA
[1]
PMBT2222 - - 400 mV
PMBT2222A - - 300 mV
collector-emitter
saturation voltage
I
C
= 500 mA;
I
B
=50mA
[1]
PMBT2222 - - 1.6 V
PMBT2222A - - 1 V