Datasheet

PMBT2222_PMBT2222A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 6 — 12 November 2010 5 of 12
NXP Semiconductors
PMBT2222; PMBT2222A
NPN switching transistors
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
V
BEsat
base-emitter saturation
voltage
I
C
= 150 mA;
I
B
=15mA
[1]
PMBT2222 - - 1.3 V
PMBT2222A 0.6 - 1.2 V
base-emitter saturation
voltage
I
C
= 500 mA;
I
B
=50mA
[1]
PMBT2222 - - 2.6 V
PMBT2222A - - 2 V
C
c
collector capacitance V
CB
=10V;
I
E
=i
e
=0A;
f=1MHz
--8pF
C
e
emitter capacitance V
EB
=500mV;
I
C
=i
c
=0A;
f=1MHz
PMBT2222 - - 30 pF
PMBT2222A - - 25 pF
f
T
transition frequency V
CE
=20V;
I
C
=20mA;
f = 100 MHz
PMBT2222 250 - - MHz
PMBT2222A 300 - - MHz
NF noise figure V
CE
=5V;
I
C
= 100 μA;
R
S
=1kΩ;
f=1kHz
--4dB
t
d
delay time V
CC
=10V;
I
C
= 150 mA;
I
Bon
=15mA;
I
Boff
= −15 mA
--15ns
t
r
rise time - - 20 ns
t
on
turn-on time - - 35 ns
t
s
storage time - - 200 ns
t
f
fall time - - 60 ns
t
off
turn-off time - - 250 ns
Table 8. Characteristics
…continued
T
j
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit