Datasheet

2004 Feb 02 3
NXP Semiconductors Product data sheet
NPN general purpose transistor PMBS3904
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= 30 V − 50 nA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= 5 V − 50 nA
h
FE
DC current gain V
CE
= 1 V; note 1; (see Fig.2)
I
C
= 0.1 mA 40 −
I
C
= 1 mA 70 −
I
C
= 10 mA 100 300
I
C
= 50 mA 60 −
I
C
= 100 mA 30 −
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 1 mA − 200 mV
I
C
= 50 mA; I
B
= 5 mA − 300 mV
V
BEsat
base-emitter saturation voltage I
C
= 10 mA; I
B
= 1 mA 650 850 mV
I
C
= 50 mA; I
B
= 5 mA − 950 mV
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz − 4 pF
C
e
emitter capacitance I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz − 12 pF
f
T
transition frequency I
C
= 10 mA; V
CE
= 20 V; f = 100 MHz 180 − MHz
F noise figure I
C
= 100 µA; V
CE
= 5 V; R
S
= 1 kΩ;
f
= 10 Hz to 15.7 kHz
− 5 dB
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
turn-on time I
Con
= 10 mA; I
Bon
= 1 mA;
I
Boff
= − 1 mA; V
CC
= 3 V;
V
BB
= −1.9 V
− 110 ns
t
d
delay time − 50 ns
t
r
rise time − 60 ns
t
off
turn-off time − 1 200 ns
t
s
storage time − 1 000 ns
t
f
fall time − 200 ns