Datasheet

PIMN31_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 19 June 2007 4 of 11
NXP Semiconductors
PIMN31
500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ
7. Characteristics
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT457 (SC-74);
typical values
006aaa494
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0.10
0.05
0.02
0.01
0
δ = 1
0.75
0.50
0.33
0.20
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base cut-off
current
V
CB
=50V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter
cut-off current
V
CE
=50V; I
B
= 0 A - - 0.5 µA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 0.72 mA
h
FE
DC current gain V
CE
=5V; I
C
=50mA 70 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 50 mA; I
B
= 2.5 mA - - 0.3 V
V
I(off)
off-state input voltage V
CE
=5V; I
C
= 100 µA 0.3 0.6 1 V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
= 20 mA 0.4 0.8 1.4 V
R1 bias resistor 1 (input) 0.7 1 1.3 kΩ
R2/R1 bias resistor ratio 9 10 11
C
c
collector capacitance V
CB
=10V;I
E
=i
e
=0A;
f=1MHz
-7-pF