Datasheet

NXP Semiconductors
PHPT61003PY
100 V, 3A PNP high power bipolar transistor
PHPT61003PY All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 13 January 2014 4 / 15
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 115 K/W
[2] - - 50 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[3] - - 30 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
- - 6 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm
2
.
[3] Device mounted on an ceramic PCB; Al
2
O
3
; standard footprint.
aaa-010427
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
-1
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
0.25
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values