Datasheet

NXP Semiconductors
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
PHPT61003NY All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 3 February 2014 9 / 16
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
aaa-010266
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
aaa-010268
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(1)
(3)
(2)
T
amb
= 25 °C
(1) I
C
/I
B
= 50
(2) I
C
/I
B
= 20
(3) I
C
/I
B
= 10
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values