Datasheet

NXP Semiconductors
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
PHPT61003NY All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 3 February 2014 7 / 16
Symbol Parameter Conditions Min Typ Max Unit
f
T
transition frequency V
CE
= 10 V; I
C
= 100 mA; f = 100 MHz;
T
amb
= 25 °C
- 140 - MHz
C
c
collector capacitance V
CB
= 10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- 11 - pF
aaa-010261
200
100
300
400
h
FE
0
I
C
(kA)
10
-1
10
4
10
3
1 10
2
10
(1)
(3)
(2)
V
CE
= 10 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
V
CE
(V)
0 542 31
aaa-010267
1
2
3
I
C
(A)
0
40
35
45
20
2
5
3
0
15
10
5
I
B
=
5
0
m
A
T
amb
= 25 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values