Datasheet

NXP Semiconductors
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
PHPT61003NY All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 3 February 2014 6 / 16
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
CB
= 80 V; I
E
= 0 A; T
amb
= 25 °C - - 100 nAI
CBO
collector-base cut-off
current
V
CB
= 80 V; I
E
= 0 A; T
j
= 150 °C - - 50 µA
I
CES
collector-emitter cut-off
current
V
CE
= 80 V; V
BE
= 0 V; T
amb
= 25 °C - - 100 nA
I
EBO
emitter-base cut-off
current
V
EB
= 7 V; I
C
= 0 A; T
amb
= 25 °C - - 100 nA
V
CE
= 10 V; I
C
= 500 mA; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C; pulsed
150 250 -
V
CE
= 10 V; I
C
= 1 A; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C; pulsed
80 250 -
V
CE
= 10 V; I
C
= 2 A; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C; pused
20 100 -
h
FE
DC current gain
V
CE
= 10 V; I
C
= 3 A; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C; pulsed
10 40 -
I
C
= 1 A; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- 90 150 mVV
CEsat
collector-emitter
saturation voltage
I
C
= 3 A; I
B
= 300 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- 225 330 mV
I
C
= 1 A; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- 90 150 mΩR
CEsat
collector-emitter
saturation resistance
I
C
= 3 A; I
B
= 300 mA; t
p
≤ 300 µs;
δ ≤ 0.02; pulsed
- 75 110 mΩ
I
C
= 1 A; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- 0.86 1 VV
BEsat
base-emitter saturation
voltage
I
C
= 2 A; I
B
= 200 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- 1 1.2 V
V
BEon
base-emitter turn-on
voltage
V
CE
= 2 V; I
C
= 0.1 A; T
amb
= 25 °C - 0.67 0.85 V
t
d
delay time - 20 - ns
t
r
rise time - 300 - ns
t
on
turn-on time - 320 - ns
t
s
storage time - 830 - ns
t
f
fall time - 470 - ns
t
off
turn-off time
V
CC
= 12.5 V; I
C
= 1 A; I
Bon
= 0.05 A;
I
Boff
= -0.05 A; T
amb
= 25 °C
- 1300 - ns